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| 2SC2023 Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC2023 300 300 6 2 0.2 40(Tc=25C) 150 -55 to +150 (Ta=25C) Unit V V V A A W C C 2.5 BCE Application : Series Regulator, Switch, and General Purpose (Ta=25C) 2SC2023 1.0max 1.0max 300min 30min 1.0max 10typ 75typ V pF 12.0min 4.0max sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=300V VEB=6V IC=25mA VCE=4V, IC=0.5A IC=1.0A, IB=0.2A VCE=12A, IE=-0.2A VCB=10V, f=1MHz External Dimensions MT-25(TO220) 3.00.2 10.20.2 4.80.2 2.00.1 Unit mA mA V 16.00.7 8.80.2 a b o3.750.2 MHz 1.35 0.65 +0.2 -0.1 2.5 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 100 RL () 100 IC (A) 1.0 VB2 (V) -5 IB1 (mA) 100 IB2 (mA) -200 ton (s) 0.3typ tstg (s) 4.0typ tf (s) 1.0typ Weight : Approx 2.6g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) 2 IB 0m =20 A V CE ( sa t ) - IB Characteristics (Typical) Collector-Emitter Saturation Voltage V C E(s a t)( V ) 3 I C - VBE Temperature Characteristics (Typical) 2 (V CE= 4V) Collector Current I C (A) 2 Collector Current I C( A) mp) e Te IB 25C (C 125C 1 (Cas to p =2 0m A /s IC=1A 0 0 0.1 0.2 2A 0.3 0 0 0.2 0.4 0.6 0.8 1.0 0 0 1 2 3 4 Collector-Emitter Voltage V C E( V) Base Current I B( A) Base-Emittor Voltage V B E( V) (VCE=4V) 200 DC Cur rent Gain h F E DC Cur rent Gain h F E 200 (V C E= 4V) j-a(C/W) hFE - IC Characteristics (Typical) hFE - I C Temperature Characteristics (Typical) j-a - t Characteristics 5 100 Typ 100 125 25C 50 50 -30 C Transient Thermal Resistance C 1 0.5 10 3 10 100 Collector Current I C( mA) 1000 2000 10 3 5 10 50 100 500 1000 2000 0.2 -30C (C ase Tem ase Te p) 1 1 mp) 1 10 100 Time t(ms) 1000 2000 Collector Current I C( mA) fT - IE Characteristics (Typical) (VCE=12V) 20 10 5 Cut-o ff F reque ncy f T( MH Z) Safe Operating Area (Single Pulse) 40 P c - T a Derating Natural Cooling Silicone Grease Heatsink: Aluminum in mm 30 Typ Collector Curre nt I C( A) D C Ma ximum Po we r Dissipa ti on P C( W) 1m s 5m s 20 ms W ith 1 0.5 In fin ite he 10 20 150x150x2 100x100x2 10 50x50x2 Without Heatsink at si nk 0.1 0.05 Without Heatsink Natural Cooling 0 -0.003 0.02 -0.01 -0.05 -0.1 Emitter Current I E( A) -0.5 -1 2 10 100 500 Collector-Emitter Voltage V C E( V) 2 0 0 25 50 75 100 125 150 Ambient Temperature Ta(C) 58 This datasheet has been download from: www..com Datasheets for electronics components. |
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